Abstract
Amorphous hydrogenated silicon germanium p-i-n heterojunction solar cells with a-SiGe:H i-layers were deposited in one case from a glow discharge of SiH/sub 4/ and GeH/sub 4/ diluted in H/sub 2/, and, in a second case, from a discharge of SiH/sub 4/ and GeH/sub 4/ with no dilution. The cells made from these two discharges had very similar initial conversion efficiencies; however, those having i-layers deposited in the presence ofH/sub 2/-dilution were more stable against light-induced degradation. This may be a result of improved material properties as indicated by infrared and Raman analysis. >
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