Abstract
Increasing the efficiency of spin–orbit torque (SOT) is of great interest in spintronics devices because of its application to the non-volatile magnetic random access memory and in-logic memory devices. Accordingly, there are several studies to alter the magnetic properties and reduce the SOT switching current with helium ion irradiation, but previous researches are focused on its phenomenological changes only. Here, the authors observe the reduction of switching current and analyze its origins. The analyzed major reasons are improved spin Hall angle represented as the changed resistivity of heavy metal layer and the reduction of surface anisotropy energy at interface between heavy metal and ferromagnet. It is confirmed that almost linear relation between changed SHA and Pt resistivity by helium ion irradiation, which is attributed because of the increase in the scattering sources induced by structural distortion during ion penetration. From the calculated power consumption ratio based on the derived parameter, the requiring power decreases according to the degree of ion irradiation. Our results show that helium ion penetration induced layer and interfacial disturbance affects SOT induced magnetization switching current reduction and may provide possibility about helium ion irradiation based superior SOT device engineering.
Highlights
Increasing the efficiency of spin–orbit torque (SOT) is of great interest in spintronics devices because of its application to the non-volatile magnetic random access memory and in-logic memory devices
SOT-magnetic random access memory (MRAM) have reading path separated from the writing path, it is expected that more stable devices are possible and more margins in the reading and writing currents
The method of irradiating helium ion is known as leading a structural rearrangement while maintaining the overall atomic layer districts in the multi-stacked structure[19] even if no ions remain in the sample due to the long penetration depth (> 50 nm)[20]
Summary
Increasing the efficiency of spin–orbit torque (SOT) is of great interest in spintronics devices because of its application to the non-volatile magnetic random access memory and in-logic memory devices. We confirm that helium ion irradiation reduced the SOT induced magnetization switching current, and conduct a dose dependent analysis of θSH through harmonic hall analysis, which was not previously analyzed, as well as interfacial effects such as PMA.
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