Abstract

ABSTRACTBlock copolymers with increased Flory–Huggins interaction parameters (χ) play an essential role in the production of sub‐10 nm nanopatterns in the growing field of directed self‐assembly for next generation lithographic applications. A library of PDMS‐b‐PEO block copolymers were synthesized by click chemistry and their interaction parameters (χ) determined. The highest χ measured in our samples was 0.21 at 150 °C, which resulted in phase‐separated domains with periods as small as 7.9 nm, suggesting that PDMS‐b‐PEO is a prime candidate for sub‐10 nm nanopatterning. To suppress PEO crystallization, PDMS‐b‐PEO was blended with (l)‐tartaric acid (LTA) which allows for tuning of the self‐assembled morphologies. Additionally, it was observed that the order‐disorder transition temperature (TODT) of PDMS‐b‐PEO increased dramatically as the amount of LTA in the blend increased, allowing for further control over self‐assembly. To understand the mechanism of this phenomenon, we present a novel field‐based supramolecular model, which describes the formation of copolymer‐additive complexes by reversible hydrogen bonding. The mean‐field phase separation behavior of the model was calculated using the random phase approximation (RPA). The RPA analysis reproduces behavior consistent with an increase of the effective χ in the PDMS‐b‐(PEO/LTA suprablock). © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016, 54, 2200–2208

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.