Improved Selenization Procedure to Obtain CulnSe2 Thin Films from Sequentially Electrodeposited Precursors

Abstract

A new approach for formation by sequential electrodeposition of Cu and In‐Se layers and subsequent heat‐treatment with elemental selenium in Ar and flows is presented. The nature of the precursors and their evolution as a function of the selenization parameters have been studied by x‐ray diffraction and x‐ray photoelectron spectroscopy analysis. Sample temperature, Se‐source temperature, and volume ratio in the flow were the subject for optimization. A sample temperature above 400°C is needed to obtain single‐phase films. An increase in the film crystallinity has been reached by maintaining the Se‐source temperature above 400°C. The introduction of in the selenizing atmosphere has proven to be unsuitable, formation must be avoided because it is more poisonous and less reactive than the elemental selenium vapor.