Abstract
Schottky capacitance spectroscopy is an electrical method allowing the characterization of interface states at a metal-semiconductor junction. This method is based on the study of the capacitance of a forward biased Schottky diode as a function of bias, temperature, and frequency. The experimental procedure previously described presents the drawback of being very time consuming because of the need for low-frequency measurements. We describe here a new improved method allowing rapid and straightforward spectroscopy with high-energy resolution.
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