Improved Schottky behavior of GaN nanorods using hydrogen plasma treatment

Abstract

In order to find the effect of hydrogen (H) treatment on leakage current and current conduction mechanism in GaN nanorods (NRs) Schottky diode, GaN NRs surface was subjected to H plasma treatment. Experimental results showed that Schottky barrier height (Φb) increased, while the ideality factor (n) decreases by the H treatment. The Φb, n of as-grown GaN NRs were found to be 0.54 eV, 2.16, on the other hand in H treated GaN NRs Schottky diodes, Φb was found to be increase to 0.72 eV, and n decreased to 1.30. Barrier inhomogeneity was confirmed by temperature dependence I-V parameters. The surface state density (NSS) calculated from Terman's method were found to be 1.21 × 1013 eV−1cm−2 and 2.15 × 1012 eV−1cm−2 for as-grown and H treated GaN NRs respectively. These results suggested H treatment effectively passivate the surface states and decreased NSS could be leads to enhancement in the Schottky behavior of GaN NRs.