Abstract
A secondary ion mass spectrometry (SIMS) investigation has been carried out on alloyed, Pt/Zn/Pt/ZrB 2/Au, ohmic contacts to p-InGaAs, on InP(001) substrates, in order to determine metal penetration depths into the semiconductor. The resolution obtained using front-surface and back-surface SIMS profiling has been compared. It has been demonstrated that front-surface profiles suffer reduced resolution as a result of surface roughness and sputter-induced roughening by the ion beam. Improved-resolution, back-surface SIMS profiles, supported by transmission electron microscopy, show negligible penetration of Au, Pt or Zn into the InGaAs, within the limits of obtainable depth resolution. However, some P diffusion from the InP into the InGaAs is indicated.
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