Abstract
An yttria-stabilized zirconia (YSZ) (∼10 nm) layer was designed and introduced by a pulse laser deposition method before a Pr 0.7Ca 0.3MnO 3 (PCMO) film was deposited on the W bottom electrode (BE) with a sub-micron via-hole structure. Comparing Pt/PCMO/W structures with those of Pt/PCMO/YSZ/W, we found that the inserted YSZ layer between the PCMO film and the W BE improves the resistive switching (RS) properties. The Pt/PCMO/YSZ/W structure shows a large R HRS/ R LRS ratio (∼10 4), low power consumption (<4 μW), good dc endurance (>100 cycles), and long retention (>10 5 s). This improvement of RS properties may be mainly attributed to the modulation of tunneling barrier YSZ layer along with oxygen ions migration between PCMO film and W BE across YSZ layer. In addition, the results of pulse measurements also show an improvement of RS properties in Pt/PCMO/YSZ/W structures.
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