Abstract
In this paper, the resistive switching behaviors of Ru:SiO2/TiO2 based memristive devices have been investigated. It is found that the random and uncontrolled formation of conductive filaments in the Ru/Ru:SiO2/p++-Si devices are crucial to realize a filamentary resistive switching. It is also found that the resistive switching behavior of Ru/Ru:SiO2/p++-Si devices could be significantly improved via inserting a TiO2 interfacial layer as in the form of Ru/Ru:SiO2/TiO2/p++-Si device structure. In the modified device, strong and stable conductive filament formation could be realized when the top electrode is positively biased. In addition to nonvolatile memory applications, an analog-type switching behavior has also been realized in our newly proposed resistive switching device. The current obtained analog conductance modulation is essential for simulating synaptic functions in electronic devices for neuromorphic applications.
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