Improved resistive switching of RGO and SnO2 based resistive memory device for non-volatile memory application

Abstract

Resistive switching memory, which combines simple architectures with the ability of high density, high switching speed, and low power consumption, has sparked a lot of attention in the field of non-volatile memory devices. In the present work, the resistive switching performance of reduced graphene oxide (RGO) and tin oxide (SnO2) based nanocomposite have been carried out. RGO, SnO2, and RGO-SnO2 nanocomposite were synthesized via hydrothermal technique and the formation of nanocomposite is confirmed by X-ray diffraction and Raman spectroscopy techniques. We herein present a bipolar resistive switching memory based on SnO2 and RGO-SnO2 fabricated by a simple spin-coating process. The two different memory devices have been fabricated by depositing pure SnO2, and RGO-SnO2 films over the bottom ITO electrode and top Al electrodes deposited through a shadow mask. It was observed that devices with RGO-SnO2 showed improved resistive switching in comparison to pure SnO2 film. This improvement of the composite-based film is recognized in terms of switching parameters, such as a reduction in the device operating voltage from 4.11 V for SnO2 to 1 V for RGO-SnO2 composite-based devices. In addition, the resistance ratio in the composite-based films showed significant enhancement. Further, the retention and endurance behavior of the fabricated composite film-based device was tested up to 1 * 103 s and up to 100 cycles respectively which didn’t exhibit any degradation. The operating mechanism of the memory device was explained by fitting the current-voltage characteristics in the low-resistance and high-resistance states. It may be highlighted that the present metal oxide and RGO-based devices have great potential for future non-volatile memory devices.