Abstract
When AIGalnAs laser structures are grown by molecular beam epitaxy on InP, the substrate deoxidation procedure is found to influence the quality of the structure: the laser threshold current densities are found to be low and reproducible when P2 is used for the substrate deoxidation. On the other hand, the reproducibility is not achieved with a deoxidation under As2. In order to interpret this result, very thin AlInAs overlayers have been deposited on InP substrates which were preliminarily deoxidized under P2 or As2 flux. The AlInAs morphology is observed by atomic force microscopy. The InP anneal under As2 leads to a rough surface as compared to the InP anneal under P2. These observations suggest that a systematic use of P2 for the substrate deoxidation can definitely improve the reliability of AIGalnAs laser structures on InP.
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