Abstract
We examined the electrical and structural characteristics of ultrathin SiO2 grown by oxidation of a Si(001) substrate in ozone (O3) ambient at 600°C. Compared with conventional thermally grown oxides in O2 ambient, a relaxation of the Si lattice strain at the SiO2/Si(001) interface was observed for ozone oxides by medium energy ion scattering spectroscopy. A significant improvement in the reliability characteristics of a metal–oxide–semiconductor (MOS) capacitor was observed for a 4-nm-thick gate oxide layer grown in ozone ambient. This improvement in reliability can be explained by the relaxation of strain at the SiO2/Si interface. An ultrathin gate dielectric formed by ozone oxidation has the potential for gate dielectric applications in future MOS device applications.
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