Abstract
The radiation hardness of MOS devices with ultrathin nitrided oxides ( approximately 100 AA) prepared by rapid thermal nitridation (RTD) of thin oxides has been studied. The radiation was performed by exposing devices under X-rays of 50 keV to a dose of 0.5 Mrad(Si). Compared with conventional thermal oxides, the RTN oxide devices exhibit a much smaller increase in both the fixed charge N/sub f/ and the interface state D/sub it/ densities. In addition, it is found that higher RTN temperature and/or longer durations produce smaller Delta N/sub f/ and Delta D/sub it/. >
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