Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment

Abstract

GaN epilayers were grown on the Si-terminated (0001) 6H-SiC substrates pre-treated by in situ H2 in metal organic chemical vapor deposition system. It was found that in situ H2 treatment brought a porous SiC surface. The influence of H2 pre-treatment conditions on SiC surface was carefully investigated. Moreover, our experiment demonstrated that the H2 pre-treatment can distinctly influence the GaN basic characteristics.