Abstract
This work investigates the effects of substrate temperature ( T S ) and hydrogen plasma post-treatment on the properties of TZO thin films prepared by radio frequency magnetron sputter. All films had a (002) preferential orientation along the c axis at 2θ ~ 34°. As T S increased from room temperature to 300 °C, the structural, electrical, and optical characteristics of the TZO films were enhanced. The hydrogen plasma was performed by a plasma-enhanced chemical vapor deposition system at 300 °C. The film resistivity decreased markedly by 60% to 1.20 × 10 − 3 Ω cm after a 90-min treatment in comparison with that of the as-deposited film. The improved characteristics of the plasma-treated TZO films are attributed to the formation of shallow donors and the desorption of oxygen species at grain boundaries during hydrogen plasma treatment.
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