Abstract
Much improved optical properties are obtained for the polycrystalline GaN layers grown on amorphous silica glass substrate by gas source molecular beam epitaxy using an ion removed electron–cyclotron resonance radical cell. Photoluminescence (PL) spectrum shows a strong band edge emission with a full-width at half-maximum (FWHM) as less as 60 meV at room temperature. 8K PL spectrum has only two sharp peaks at 3.49 eV (FWHM 17 meV) and at 3.44 eV (FWHM 30 meV). X-ray diffraction rocking curve indicates C-axis orientation. Atomic force microscopy image shows a strongly oriented uniform-size grain structure surface morphology. Clear correlations between the PL properties and the crystalline structures (qualities) are observed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.