Improved power and temperature performance of half-disk diode microlasers.

Abstract

The power and temperature characteristics of Ø200 µm half-disk microlasers with a half-ring metal contact and high-density InGaAs/GaAs quantum dots are studied. In a continuous wave (CW) mode, the maximal optical power at 20°C was 134 mW, and the maximal CW lasing temperature reached 113°C. In a pulsed regime the maximal optical power of 1.6 W, limited by catastrophic degradation, was achieved. By comparing the CW and pulsed current-voltage characteristics, the dependence of a microlaser temperature on CW pumping current was determined. At CW currents corresponding to the maximal wall-plug efficiency, the maximal optical power, and complete lasing quenching, the laser temperatures were 60, 99, and 149°C, respectively.