Abstract
The total ionizing dose (TID) effect of modulated gate workfunction (MGW) FinFET based CMOS inverter is designed and analyzed. The post radiation analysis of the voltage transfer characteristics, noise margin and propagation delay are demonstrated. The incorporation workfunction modulation engineering enhances the OFF-state performance, and maintains positive threshold voltage for both the pre and post radiation condition. 2-decade improvement is noticed for the both n-FinFET and p-FinFET. In addition, the proposed technique offers minimum propagation delay time and acceptable noise margin range even after 2000 krad of radiation dose. The analysis and comparison of the results is done by the 3-D TCAD simulator.
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