Abstract
A potential VLSI MOS device called BGP (buried-channel graded-drain with punchthrough stopper) with planar isolation is characterized in terms of fabrication techniques and its device performance. This planar isolation approach has been realized using highly directional dry etching and through-field-oxide implantation. It features simultaneous formation of punchthrough and parasitic channel stoppers and an effective channel width almost equivalent to nominal one. Fundamental device characteristics such as short-channel and narrow-channel effects are investigated. Good isolation performances are demonstrated in devices having 1μm feature size at standard 5V operation.
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