Abstract
Improved planar isolation with buried-channel MOS FET's: H. Sunami, Ykawamoto, K. Shimohigashi and N. Hashimoto Microelectron Reliab.24, 555 (1984)
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
