Improved photoluminescence and ferroelectric properties of (Bi3.6Eu0.4)Ti3O12thin films via Li+doping

Abstract

(Bi(3.6)Eu(0.4))Ti₃O₁₂ (BEuT) thin films with different Li+ doping contents were prepared on fused silica and Pt/Ti/SiO₂/Si substrates by chemical solution deposition, and the effects of Li+ doping contents on the photoluminescence and ferroelectric properties of the thin films were investigated in detail. The results showed that an appropriate amount of Li+ doping could effectively improve emission intensities for two characteristic Eu³+ emission transitions of ⁵D₀→⁷F₁ (594 nm) and ⁵D₀→⁷F₂ (617 nm) compared with BEuT thin films without Li doping. This photoluminescence improvement can be attributed to the dual roles of Li+ ions, one of which is that Li ions can act as co-activators which are helpful to the energy transfer from the host to the Eu³+ ions, leading to a higher quantum yield; the other is that Li ion doping can induce local distortion of crystal field surrounding the Eu³+ activator because Bi³+ and Li+ ions have different ionic radii. In addition, the Li+-doped BEuT thin films had larger remanent polarization than BEuT thin films without Li doping prepared under the same experimental conditions. These results suggest that Li+ doping is an effective way to improve photoluminescence and ferroelectric properties of the (Bi,Eu)₄Ti₃O₁₂ thin films.