Abstract
In this paper we report on co-precipitation and spin-coating process to synthesize pure and aluminum (Al) doped nanostructured zinc oxide thin layers. X-ray diffraction (XRD) technique was involved to investigate the crystalline properties of prepared layers. XRD analysis indicated that the films were indexed as the hexagonal phase of wurtzite-type structure. Al doping revealed a significant effect on the optical measurements, where the band gap has been shifted from 3.22 eV for pure ZnO film to 3.27 eV after Al doping. Additionally, among all photo-anodes with different Al dopant concentrations, the sample with 1 at.% Al:ZnO film exhibited the fastest response and highest photoconduction sensitivity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
