Abstract
An interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with a two-step passivated (ledge structure and sulfur treatment) process on the base surface has been fabricated and studied. Based on the two-step passivation, improved transistor characteristics including the specific contact resistances ρ C, sheet resistances R sh, base surface recombination current density J SR, base current ideality factor n B, and microwave performances are obtained. Furthermore, the device with two-step passivation reveals the better thermal stability on ρ C, R sh, and n B than the devices with and without ledge structure. Therefore, the two-step passivation method can be employed for high-temperature and low-power electronics applications.
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