Abstract
We prepared quantum dot light-emitting diodes (QLEDs) with a tungsten oxide (WO3) hole injection layer (HIL) produced via thermal evaporation. Placement of a WO3 layer between the indium tin oxide (ITO) anode and the poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine] (poly-TPD) hole transport layer (HTL) reduced the QELD threshold voltage and enhanced luminance, luminous efficiency, and quantum external efficiency. The optimal layer thickness was 10 nm, associated with increases of 57.2% and 72.3% in the maximum luminous efficiency and maximum external quantum efficiency, respectively, compared to the reference QLED without WO3 HIL. The results can be explained from fact that the insertion of WO3 HILs reduced the energy barrier between the ITO and poly-TPD layers, thus facilitating hole injection from ITO into poly-TPD.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
