Abstract
Incorporation of thin layers of strong acceptor tetrafluro-tetracyanoquinodi methane (F4TCNQ) over conducting substrate Indium-Tin-Oxide (ITO) modified its work function. The enhancement depended on the thickness of F4TCNQ film. These modified ITO substrates were used as hole injection contacts in OLEDs which show enhanced device current, lower operating voltages and enhanced current efficiency.
Highlights
In organic based electronic devices like Organic Light Emitting Diodes(OLEDs) and Organic Photovoltaics(OPVs), the basic processes such as charge injection, charge transport, capture and radiative recombination of opposite charged charge carriers are involved[1,2]
In an organic metal interface, if interface dipoles are absent and vacuum level alignment is assumed the energy barrier for charge injection is given by the difference between the work function of the electrode and the highest occupied molecular orbital(HOMO) or lowest unoccupied molecular orbital(LUMO) of the organic semiconductor (Schottky-Mott Limit)
It has been observed from the energy level diagram that there are large energy barrier (0.7eV) between indium tin oxide (ITO) and Spiro TAD
Summary
This content has been downloaded from IOPscience. Please scroll down to see the full text. 73 012046 (http://iopscience.iop.org/1757-899X/73/1/012046) View the table of contents for this issue, or go to the journal homepage for more. Download details: IP Address: 14.139.60.97 This content was downloaded on 20/11/2015 at 06:30 Please note that terms and conditions apply
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