Improved performance of MOVPE-grown GaInNAs quantum wells by control of interfacial strain

Abstract

A comprehensive study to achieve optically efficient GaInNAs quantum wells (QWs) grown by low-pressure metalorganic vapor phase epitaxy (MOVPE) has been accomplished. In order to extend emission wavelength over 1.3 μm effectively, GaInNAs QW structures with multiple barriers of GaNAs/InGaAs were proposed. Significant improvement of photoluminescence efficiencies and easy controllability of emission wavelengths over the 1.3 μm range were demonstrated with the proposed structure. It is believed that the wavelengths emitted from our employed QW structures are correlated to the amount of strain, determined by the strain competition between InGaAs (compressive) and GaNAs (tensile) layers. As N contents increased in the QWs, the emission wavelength was able to extend up to 1.38 μm without deteriorating spectral width.