Abstract
AbstractWe have investigated the electrical properties of n-GaAs epilayers grown by MBE on the top of L.T.GaAs .The Hall mobility and the channel depth of the epilayer decreases as the growth temperature of the buffer decreases. The degradation of the electrical properties is attributed to the outdiffusion of precipitates and point defects from the L.T. buffer layer. The use of intermediate layers (GaAs grown at 400°C-600°C and GaAs/AlxGa1-xAs (x=0.5, 1) superlattices ) between L.T. buffer and n-GaAs active layers in MESFET devices improves the Hall mobility of the channel, the gm and fT performance of the devices.This improvement has been attributed to the AlGaAs layer which hinders the defects outdiffusion.
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