Abstract
Superstrate configuration CuInS2 (CIS) solar cells are fabricated using a spray pyrolysis method. We avoided selenization process, cyanide etching and CdS buffer layer, to keep the process ‘green’. CIS layers are formed by spray pyrolysis of an aqueous precursor ink containing metal chloride salts and thiourea at 350 °C. We investigated the effect of intentional Zn doping on structural, morphological and photovoltaic response of the fabricated CIS films by dissolving ZnCl2 in aqueous precursor solution. At a zinc doping level ranging between 0.25 and 1.00 mol%, Zn doping is found to improve the CIS crystal growth and surface morphology of CIS films. Compared with the performance of the non-doped CIS cell, the Zn-doped CIS solar cell displayed a remarkable efficiency enhancement of 58–97% and the maximum enhancement was obtained at a Zn content of 0.5 mol%. The device structure consists of <glass/FTO/TiO2/In2S3/CIS/carbon > and show promising PCE of 4.29 % without any anti-reflection coating. Over the course of 300 d under ambient condition, the fabricated device showed only 1% loss in efficiency.
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