Abstract
We report the improved performance of graphene oxide (GO) based resistive random-access memory devices (ReRAM) through mild hydrogen plasma treatment. The threshold voltage of the ReRAM device is successfully reduced from 2.6 to 1.8 V together with an enhanced ON/OFF ratio of 103 with the help of hydrogen plasma treated GO (HGO). Significantly, the rise of a weak 2D band in Raman spectrum of HGO reveals the mild reduction of GO by H2 plasma. The concurrent removal of oxygen moieties on basal plane and on edges of graphitic network in GO by the virtue of H2 plasma is argued to contribute enhanced performance in ReRAM devices. The significant diminution of oxygen moieties on GO lattice in HGO infused device reduces the insulating barrier formed at Al/GO interface which reinforced the electron transport. The effective selection of plasma treatment is found to be one of the proficient routes to enhance the storage capabilities of GO based resistive memory devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
