Abstract
A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED with stair-like Si-doping GaN layer possesses better quality and a lower dislocation density. In addition, the experimental results demonstrate that light output power and wall plug efficiency of UV-LED with stair-like Si-doping GaN are significantly improved. Through the analysis of the experimental and simulation results, we can infer that there are two reasons for the improvement of photoelectric characteristics: reduction of dislocation density and alleviating of current crowding of UV-LEDs by introduced stair-like Si-doping GaN.
Highlights
There are still some issues that limit the improvement of optoelectronic properties of LEDs: polarization induced quantum confined stark effect (QCSE) in quantum wells (QWs) reducing the overlap of electron and hole wave-functions spatially [5], the electrons overflowing from active layers into p-GaN region causing the strong leakage current [6] and an amount of dislocations acting as the non-radiative recombination centers generated by the large lattice mismatch and thermal mismatch [7]
The high-quality GaN-based ultraviolet light-emitting diodes (UV-LEDs) structure with an emission wavelength of 390 nm with stair-like Si-doping n-type GaN layer were fabricated by metalorganic chemical-vapor deposition (MOCVD)
The high-quality GaN-based UV-LEDs structure with an emission waveFirst of all, 25-nm-thick AlN nucleation layer is deposited on the sapphire substrates length of 390 nm with stair-like Si-doping n-type GaN layer were fabricated by metalwith magnetron sputtering on 2-inch (0001) patterned sapphire substrates
Summary
Academic Editors: Haiding Sun, Bharat Jalan, Shibing Long, Yuhao Zhang, Rajendra Singh, Xuelin Yang, Yuji Zhao, Bin Liu and Dmitri Donetski. For the conventional LED structures, the injection current has a certain limited lateral spreading distance when the device is on, which causes the uneven current distribution in the chip and aggravates the current crowding around the electrodes To save this problem, a large number of literatures focus their attention on the design of device and epitaxial layer structure. The high-quality GaN-based UV-LEDs structure with an emission wavelength of 390 nm with stair-like Si-doping n-type GaN layer were fabricated by metalorganic chemical-vapor deposition (MOCVD). This method is simple and easy of 7 to implement, and improves the current spreading characteristics. Have improved the current spreading, and increase the complexity and uncontrollability of2.the experimental process to a certain extent
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