Abstract
A periodic GaP-dish mirror structure was introduced into AlGaInP light-emitting diodes (LEDs) through wet etching and Si wafer bonding process. It was found that the performance of these GaP-dish LEDs was better than that of conventional LED transferred to Si substrate (LED-C). In addition, the output power of GaP-dish LEDs was increased with the decrease of GaP-dish diameter. When the GaP-dish diameter decreased to 3 mum, the output power reached 2.2 mW, which was two times higher than that of LED-C.
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