Abstract
A novel 4H-SiC MESFET with stepped-channel (stepped-spacer) structure is proposed for the first time and analyzed by 2D numerical simulation. Based on the stepped buried oxide structure of SOI which can produce additional electrical Electric field peaks, much more advantages can be obtained through a stepped-channel structure compared to that of the field terminal technology, such as an obvious increase of the breakdown voltage which is equal to the electric field to the path integral, and the lower capacitances lead to a higher cut-off frequency. The simulation results show that a 100% higher saturated drain current and a 153% larger breakdown voltage can be obtained utilizing the stepped-channel structure MESFET than those of the conventional counterpart.
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