Abstract
To improve the performance of 3CSiC photocathodes, we formed a pn junction at the 3CSiC surface. Using current–voltage measurements for Schottky contacts on 3CSiC, the Schottky barrier height and depletion layer width of 3CSiC having a pn junction was observed to be larger than those of 3CSiC without the junction. By measuring photocurrent and spectral responses, the 3CSiC photocathodes with the pn junction exhibited larger photocurrent and higher quantum efficiencies compared with 3CSiC without the pn junction. Using a Pt cocatalyst on the 3CSiC photocathode with the pn junction, the solar-to-hydrogen energy conversion efficiency was measured at 0.72%.
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