Abstract
We demonstrate significantly enhanced performances of 1.3-μm InAs/GaAs quantum dot (QD) lasers by directly Si-doped QDs. The lasers were grown by molecular beam epitaxy. Following Si doping, the ridge waveguide laser, with uncoated facets, showed a remarkably reduced continuous-wave threshold current density of 71.6 A/cm2 (14.3 A/cm2 per QD layer), compared with 167.3 A/cm2 (33.5 A/cm2 per QD layer) for an undoped device with an identical structure, measured at 20 °C. Moreover, doping improved the single-side slope efficiency from 0.28 to 0.42 W/A. In addition, the Si-doped QD laser exhibited a higher lasing temperature of up to 140 °C compared with 120 °C for the undoped QD laser.
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