Improved performance in quantum-dot light-emitting diodes through current annealing

Abstract

The impact of metallic diffusion, stemming from the thermal evaporation process of electrodes, exerts a substantial influence on solution-processed quantum-dot light-emitting diodes (QD-LEDs). This study highlights a significant enhancement in the performance of QD-LEDs achieved through post-metal-evaporation current annealing. The choice of different metal electrodes emerges as a critical factor affecting QD-LED performance during current annealing. In the case of red QD-LEDs with an Al cathode, the maximum external quantum efficiency (EQE) surged from 7.0% to an impressive 14.1%. Conversely, QD-LEDs with an Ag cathode exhibited a more modest improvement, progressing from 10.8% to 12.4%. Notably, an Al/Ag composite electrodes demonstrated the potential for further enhancement, achieving a remarkable maximum EQE of 18.3%. The observed performance improvements can be attributed to the formation of metal diffusion-induced Al-doped ZnO, facilitating electron injection, and Al-oxidized passivated quantum dots (QDs), effectively mitigating metal-induced quenching following current annealing. This study conclusively demonstrates that the application of current annealing can effectively counteract the adverse effects of metal diffusion in QD-LEDs, presenting itself as a promising method for elevating the overall performance of quantum-dot light-emitting diodes.