Improved performance HEMT device with backup bulk for LNA application

Abstract

This study proposes a 30 nm gate length double-gate InAlN/GaN on a 4H-SiC substrate high-electron-mobility transistor. Different electrical characteristics such as DC, AC, capacity and noise analysis were performed through TCAD device simulations. The proposed device exhibited a maximum drain current of 2.15 A mm−1, a transconductance of 1308 mS/mm, (350/610) GHz of FT/FMAX and a maximum noise figure of NFMax = 9.5 dB at 1 THz. Thus, LNA-HEMT has been designed considering the main characteristics of power with a new structure, in terms of temperature and low noise figure effect. Adopting the backup bulk in the optimization procedure, the proposed device obtained an outstanding performance with appropriate low power consumption for the GEO satellite application.