Abstract
This letter reports, for the first time, N/sub 2/O-grown oxides on both n-type and p-type 6H-SiC wafers. It is demonstrated that the N/sub 2/O-grown technique leads to not only greatly improved SiC/SiO/sub 2/ interface and oxide qualities, but also considerably enhanced device reliabilities as compared to N/sub 2/O-nitrided and conventional thermally oxidized devices. These improvements are especially obvious for p-type SiC MOS devices, indicating that N/sub 2/O oxidation could be a promising technique for fabricating enhancement-type n-channel SiC MOSFETs.
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