Abstract
The PEDOT:PSS is often used as the window layer in the normal structured PEDOT:PSS/c-Si hybrid solar cell (HSC), leading to significantly reduced response, especially in red and near-infrared region. By depositing the PEDOT:PSS on the rear side of the c-Si wafer, we developed an inverted structured HSC with much higher solar cell response in the red and near-infrared spectrum. Passivating the other side with hydrogenated amorphous silicon (a-Si:H) before electrode deposition, the minority carrier lifetime has been significantly increased and the power conversion efficiency (PCE) of the inverted HSC is improved to as high as 16.1% with an open-circuit voltage (Voc) of 634 mV, fill factor (FF) of 70.5%, and short-circuit current density (Jsc) of 36.2 mA cm−2, an improvement of 33% over the control device. The improvements are ascribed to inverted configuration and a-Si:H passivation, which can increase photon carrier generation and reduce carrier recombination, respectively. Both of them will benefit the photovoltaic performance and should be considered as effective design strategies to improve the performance of organic/c-Si HSCs.
Highlights
Compared with traditional high temperature p-n junction fabrication, the organic/c-Si hybrid solar cells (HSC), which show advantages in economic processing[1,2,3,4,5,6,7,8,9,10,11], have attracted significant attention in recent years
We develop the inverted structured HSC with configuration of indium tin oxide (ITO)/amorphous silicon (a-Si):H/c-Si/PEDOT/Ag, which combine advantages of transparent electrode and surface passivation of HIT solar cell as well as the back PEDOT:PSS electrode to improve the light utilization, charge collection efficiency and stability[29]
Compared to the normal structured HSC with PEDOT:PSS deposited on the front of c-Si wafer surface as a window layer, the inverted structure design can lead to higher transmittance and lower reflection, which result in higher external quantum efficiency (EQE) in 500–1200 nm range and larger Jsc 36.2 mA cm−2
Summary
Compared with traditional high temperature p-n junction fabrication, the organic/c-Si hybrid solar cells (HSC), which show advantages in economic processing[1,2,3,4,5,6,7,8,9,10,11], have attracted significant attention in recent years. Over the past few years, the reported efficiency of c-Si HSC based on PEDOT:PSS is mostly around 13%5,13,19,22,23 In these normal hybrid solar cells (HSC), the PEDOT:PSS is often used as the window layer, which lead to significantly reduced response, especially in red and near-infrared region[22,24,25,26,27], due to parasite absorption of PEDOT:PSS film, as reported by Dimitri Zielke et al.[28]. We develop the inverted structured HSC with configuration of ITO/a-Si:H/c-Si/PEDOT/Ag, which combine advantages of transparent electrode and surface passivation of HIT solar cell as well as the back PEDOT:PSS electrode to improve the light utilization, charge collection efficiency and stability[29]. Further device analysis based on carrier lifetime measurement show that the PCE of the inverted PEDOT:PSS/c-Si HSC can potentially exceed 20%
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