Abstract

The development in efficiency of earth abudant chalcogenide Cu2ZnSnS4 (CZTS) photovoltaics has been slowed down, due to the instrinsic limitations like open circuit voltage (Voc) defict imposed by band tailing attributed primarily to antisite exchange in compound. Herein, kesterite-type multicomponent sulphide Ag2ZnSnS4 (AZTS) quantum dots (QDs), in which Ag is replaced by Cu, size ranges in between 1.6 and 4.5 nm were successfully synthesized by a simple solvothremal approach without any post annealing process. The obtained AZTS QDs were characterized by X-ray diffraction technique, field emission scanning electron microscopy, transmission electron microscopy, Raman, X-ray photoelectron spectroscopy, photoluminesece, UV–visible absorbance. The as synthesized AZTS QDs are incorporated into a photovoltaic cell with configuration of Mo/AZTS QDs/CdS/ZnO/Al. The photovoltaic device performance and time stability of fabricated device was investigated and an efficiency of 6.28% was successfully achieved.

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