Abstract
Junction-less nFETs are used as top-tier device in a 3D sequential integration. Due to the low thermal budget allowed in the 3D integration, conventional inversion mode FETs show extremely poor PBTI reliability. In contrast, Junction-less nFET shows improved BTI reliability, which is attributed to the reduced oxide electric field. We observe that their reliability can be improved by increasing the channel doping and/or the channel thickness. We use the non-radiative multi-phonon (NMP) theory, as implemented in the imec/T.U. Vienna BTI simulation framework “Comphy”, to investigate the degradation kinetics and show that, the stress/recovery traces measured in inversion mode and junction-less nFETs can be reproduced with a single set of defect parameters. Based on this model, we perform the lifetime projections, exposing a substantial deviation from commonly used power-law extrapolation.
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