Abstract
The vertical-cavity surface-emitting laser (VCSEL) has unique advantages over the conventional edge-emitting laser and has recently attracted a lot of attention. However, the output power of GaN-based VCSEL is still low due to the large electron leakage caused by the built-in polarization at the heterointerface within the device. In this paper, in order to improve the output power, a new structure of p-type composition-graded AlxGa1−xN electron blocking layer (EBL) is proposed in the VCSEL, by replacing the last quantum barrier (LQB) and EBL in the conventional structure. The simulation results show that the proposed EBL in the VCSEL suppresses the leaking electrons remarkably and contributes to a 70.6% increase of the output power, compared with the conventional GaN-based VCSEL.
Highlights
Vertical-cavity surface-emitting lasers (VCSELs) exhibit several advantages over edge-emitting lasers (LDs), including high-speed direct modulation, circular mode profile, low threshold current, etc. [1,2,3]
We proposed an improved gallium nitride (GaN)-based VCSEL structure called GVCSEL to reduce the electron leakage
In GVCSEL, the last quantum barrier (LQB) and electron blocking layer (EBL) in the conventional GaN-based VCSEL are replaced with a new layer which consists of a composition-graded p-AlxGa1−xN layer and a p-AlxGa1−xN layer
Summary
Vertical-cavity surface-emitting lasers (VCSELs) exhibit several advantages over edge-emitting lasers (LDs), including high-speed direct modulation, circular mode profile, low threshold current, etc. [1,2,3]. This structure achieved the highest output power of a GaN-based VCSEL ever produced to the best of our knowledge. For InP and other semiconductor-based lasers, lower threshold and higher output power can be achieved by designing the micro-cavities, which may have good effects in GaN-based VCSELs [12,13,14].
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