Abstract
Although multi-level storage is an effective approach to increase data-storage capacity, it is currently still a big challenge to prepare chalcogenide phase-change films with excellent storage property. Here, we find that the storage property of germanium-antimony-tellurium films is significantly improved by nitrogen doping, and the underlying mechanism is well elucidated by our experiments and theoretical calculations. It is shown that nitrogen doping induces a wide quasi-platform of intermediate resistance state and simultaneously increases insulator-metal-transition temperature due to changes in electric structures. This study shows the important role of doping and provides a new strategy for realizing multi-level data storage.
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