Abstract
ABSTRACTWork on silicon crystal quality improvement and defect control has been carried out on lab‐scale seeded growth ingots allowing wafers with controlled grain orientations. Both <111> and <100> monocrystalline‐like ingots were produced using a combination of quartz rod dipping and a modulated conductive heat extraction system, made in‐house, in a directional solidification system. Two mono‐like wafer morphology types have been produced. Their structural and electrical properties are presented in detail. Copyright © 2011 John Wiley & Sons, Ltd.
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