Improved Model of Wafer/Pad Powder Slurry for CMP

Abstract

Chemical mechanical polishing (CMP) is a key technique for wafer global planarization. Increasing demands for high uniformity and dimensional precision make previously discountable levels of asperity and particle effects significant. However, particle size and pad asperity have not been considered simultaneously in previous literature. This study presents a grain flow model which applies the average lubrication equation with partial hydrodynamic lubrication theory, thereby analyzing slurry flow between wafer and pad and taking into account both grain flow and roughness effects. This model predicts slurry flow film thickness with various convex wafer curvature radii under a variety of the CMP parameters, including applied load, rotation speed, dome height, particle size, and pad roughness. Furthermore, the influence of particle size and pad asperity on removal rate is investigated. The results compare well with experimental data in the literature. © 2003 The Electrochemical Society. All rights reserved.