Abstract
UV-ozone oxidation of GaAs epitaxial layers was evaluated for GaAs molecular beam epitaxy regrowth. Auger electron spectroscopy was used to determine the conditions leading to a contaminant-free surface before epitaxy; oxide uniformity, surface roughness and crystalline defects were also studied using transmission electron microscopy. Finally, the capability of this technique was demonstrated by growing a GaAlAs-GaAs-GaAlAs quantum well on a processed GaAs epitaxial layer.
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