Abstract
Ge nanocrystal (NC) memory using a LaAlO 3 (LAO) buffer layer was investigated. A 1 nm amorphous LAO layer was deposited by an E-beam evaporator prior to Ge deposition. After the annealing of a SiO 2 /LAO/Ge/LAO stack, Ge NCs with average sizes of 4 nm were formed. Compared to a control sample without the buffer layer, memory devices with a LAO buffer layer exhibited superior memory characteristics, such as a larger window of capacitance-voltage hysteresis and excellent retention. These enhanced memory properties can be explained by the effective suppression of Ge diffusion attributable to the buffer layer. © 2008 The Electrochemical Society. [DOI: 10.1149/1.2901545] All rights reserved.
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