Abstract
Drift Step Recovery Diodes - DSRDs - are known since 1960s. All this time silicon DSRDs were made by basically the same technology: deep diffusion - cut into dies - stacking dies - side passivation. As technology did not change, DSRD pulse performance did not improve significantly. We suggest and experimentally validate new process flow: epitaxy - side passivation – stacking wafers - cut into stacked dies. Advantages of the new process over traditional one is described. Pulsed performance of final devices to be described in a separate paper.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
