Abstract

We present an improved method that uses photoluminescence images to calculate the spatially-resolved efficiency in addition to other performance parameters of silicon solar cells. This new method is simpler than our previously-presented two-diode method, using only one diode with a variable ideality factor. Experimental results show that the simplified method is more tolerant of very large variations in local series resistance, a characteristic commonly seen in silicon cells. Using dark lock-in thermography techniques, we quantitatively verify the efficiency images produced by our improved method.

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