Abstract
The single-tone power of the AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate widths was measured. A distinct improvement in device linearity was observed in the sample with a larger gate width. The analysis of the variation of the parasitic source access resistance showed that, as the gate bias is increased, the polarization Coulomb field scattering can offset the increased polar optical phonon scattering and improve the device linearity. This approach is shown to be effective in improving the device linearity of AlGaN/GaN HFETs.
Highlights
In this research, two types of AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate widths were fabricated
The gate biases were chosen as −2 V, −1.5 V, −1 V, and −0.5 V, respectively
The match condition was correlated with the device structure and the chosen direct current quiescent points (DCQPs)
Summary
Two types of AlGaN/GaN HFETs with different gate widths were fabricated. This means that Sample 2, which has a larger gate width, has better linearity. The charge trapping in the surface state, gate-drain capacitance, self-heating effect, device transconductance, and parasitic source access resistance can affect the device linearity[7,10,12,13,14,15,16]. Because both samples were fabricated on the same material and with the same device technology, the charge trapping in the surface state and the gate-drain capacitance should be the same.
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