Abstract
Original differential structures using exclusively MOS devices working in the saturation region will be presented. Performing the great advantage of an excellent linearity, obtained by using original linearization techniques, the proposed circuits will be developed and designed for low-voltage low-power operation. The estimated linearity is obtained for an extended range of the differential input voltage. As an extension of the linearized differential structure, active resistor circuits having both positive and negative equivalent resistances will be designed, presenting the same linearity and extended input voltage range. The frequency response of the proposed structures is strongly increased by operating all MOS devices in the saturation region, while the complexity and design costs are strongly reduced as a consequence of the circuit multifunctionality.
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